Abstract
Sharp changes in the integral intensity and linewidth of the ESR spectrum that accompany the localization of the charge carriers have been revealed in α’-(BEDT-TTF)2IBr2 crystals. It has been found that the types of localization in two compounds under investigation are different: charge carriers in β″-(BEDT-TTF)4NH4[Cr(C2O4)3] are localized on irregular defects of the crystal lattice, whereas charge carriers in α’-(BEDT-TTF)2IBr2 are localized at the regular positions of the unit cell. The exchange narrowing of the ESR line and a sharp decrease in the dc and ac magnetic susceptibilities are observed in α’-(BEDT-TTF)2IBr2 at low temperatures T 50 K differ from each other, because the thermally activated hopping frequency of the charge carriers is higher than the frequency of the measuring UHF field of an ESR spectrometer.
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