Abstract
We have studied theoretically electrical transport in a new ferromagnetic semiconductor (Ga,Mn)As by taking into account spin disorder and impurity scatterings. Especially we have investigated the effect of the collisional broadening on the spin disorder scattering due to the strong interaction of charge carriers with the Mn ions. By using Zubarev’s double-time Green’s functions we derive an estimate for the carrier lifetime in the case of strongly broadened band states. The collisional broadening results in a Lorenzian-type spectral function, which in turn broadens the resistivity peak near the Curie temperature as compared to the conventional d-function-type spectral function. This improves the fit of the calculated results to the experimental resistivity data in Ga0.947Mn0.053As.
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