Abstract
We have theoretically investigated the effect of Dresselhaus spin–orbit coupling on spin-transport properties of ferromagnet/insulator/semiconductor/insulator/ferromagnet (Fe/Al2O3/SM/Al2O3/Fe) heterostructure. Based on the two band model and nearly-free-electron apptoximation, tunnel current and magnetoresistance are calculated as a function of bias voltage. Our calculations are carried out for three different semiconductors such as InAs, AlAs and InP. It is shown that the Dresselhaus spin–orbit interaction, in general, leads to enhancement of tunneling magnetoresistance. It is also shown that it strongly depends on the thickness of layers, bias voltage and electron effective mass in semiconductor layers.
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