SPECTROSCOPIC STUDY OF RF MAGNETRON SPUTTERING PLASMA FOR DEPOSITION TI6AL4V THIN FILM

Abstract

In this work, RF magnetron sputtering plasma for the deposition of Ti6Al4V thin film has been investigated by using optical emission spectroscopy at argon working pressure of 5×10-3 mbar. The emission lines intensity of the plasma were measured using a spectrometer, and the identify peaks within the selective range of patterns and matched with the standard data from the NIST website to measure the plasma parameters. Since the sputtering power plays an important role to the growth of thin film, so the effect of sputtering power of 50, 75, 100, 125 and 150Watt has been studied on produced plasma parameters. The size of Ti6Al4V sputtering target was 50mm in diameter. The argon gas flow was 40 s ccm. One can observe that the lines intensities increased with increasing the sputtering power. The plasma temperature increases from 1.86 to 2.15 eV, while its density increased from 2.69 ×1018 to 2.94 ×1018 cm-3with increasing the rf power from 50 to 150 W, which effect on sputtering rate.