Abstract
In this paper, the infrared optical properties of diamond films on silicon substrates grown by means of hot filament chemical vapour deposition (HFCVD) and microwave plasma chemical vapour deposition (MPCVD) method, are studied by infrared spectroscopic ellipsometry (IRSE) in the energy range of 0.1–0.4 eV. The establishment of appropriate models has the strongest influence on the fit of ellipsometric spectra. For diamond films grown by HFCVD method, the best fitting model is Si|diamond| (diamond + void)| air with an 879 nm rough surface layer included by Bruggeman EMA, but for MPCVD film with a 77.5 nm middle layer of SiO2. The average refractive index n of the HFCVD film is about 2.19 and the extinction coefficients k are between 1.0 and 10−3. However, for the MPCVD film, the value of n is very close to that of natural diamond and the k values are about 10−12–10−15, which show that the film grown by MPCVD is transparent in infrared region, and is optically much better than the HFCVD film.
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