Abstract
Third generation synchrotron light sources like Elettra offer the opportunity to focus a high-intensity X-ray photon beam to the submicron region. This allows applications of X-ray photoelectron spectroscopy to determine the composition, chemical bonding and electronic structure at the microscopic level with a lateral resolution of about 100 nm. In this way phenomena on heterogeneous surfaces and interfaces can be studied, and among them metal/semiconductor interfaces are of particular interest. Synchrotron radiation scanning photoemission microscopy was used to investigate ultra-thin films of Au, Ag and Ni on a Si(1 1 1) surface to reveal the fundamental processes in bimetal/semiconductor interface formation. The local interactions of the thin confined Au and Ni metal films with an Ag/Si(1 1 1) interface covered with three-dimensional micron-sized islands was studied as a function of annealing temperature. From the photoelectron spectra and spatially resolved two-dimensional maps we followed the formation of new phases and their stability.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
