Abstract
A numerical model making it possible to analyze the specific features of the steady-state distribution of carriers and the nature of the holding current for the axially symmetric case typical of optically triggered high-power SiC thyristors has been developed. The planar and axially symmetric models are compared. The relative contributions of the field and diffusion mechanisms of turn-on spread are analyzed. It is demonstrated that the diffusion mechanism of turn-on spread does not noticeably contribute to the steady-state carrier distribution and the field mechanism plays a major role. The data obtained are in satisfactory agreement with the first experimental results for the holding current in optically triggered SiC thyristors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
