Abstract
Specific features of the micro-and nanorelief of the (001) surface of single-crystalline silicon upon etching in aqueous KOH solutions of various concentrations and at various temperatures, in the presence of new modifying additives (KMnO4, KNO3) and without them, were studied. The formation of the main Si(001) defects was attributed to temporary local adsorption of silicates (products of silicon etching) on the silicon surface.
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