Abstract
Crystalline (InAs-GaAs)/GaAs (001) multilayer periodic structures containing InAs quantum dots (QDs) have been studied by SR-CTR (Synchrotron Radiation - Crystal Truncation Rod) and RSM (Reciprocal Space Mapping) methods. The appearance of a lateral long-range order in InAs-GaAs QDs has been demonstrated. A qualitative model of investigated structures has been suggested, within which the static Debye-Waller factor has been obtained. Using a new statistical approach considering semidynamical X-ray diffraction allows both the CTR and RSM data to be simulated. The principal parameters of the investigated structures have been determined by means of a fitting procedure.
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