Abstract
Micro-Raman spectroscopy has been utilized to determine the local material composition of an In x Ga 1− x As layer and the local free-charge-carrier concentration of a Si-doped InP layer grown on patterned InP(1 0 0) substrates. The layers exhibited 8 or 11 μm long {1 1 1}A and {1 1 1}B facets delimited by (1 0 0) planes. The In concentration x in the In x Ga 1− x As layer has been derived from the Raman shift of the GaAs-like LO phonon. Line scans along (1 0 0)/{1 1 1}A/(1 0 0) and (1 0 0)/{1 1 1}B/(1 0 0) facet transitions reveal a distinct drop of x over more than 0.1 at the (1 0 0)/{1 1 1} transitions. In the Si-doped InP layer the density n of free electrons has been obtained from the Raman shift of the coupled plasmon–LO–phonon mode. A line scan along a (1 0 0)/(1 1 1)A/(1 0 0) facet transition shows a decrease of n from 1.4×10 18 cm −3 on the (1 0 0) surface to 0.5×10 18 cm −3 on the (1 1 1)A facet.
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