Abstract
The availability of automated techniques makes possible very detailed characterization of III–V epitaxial layers. We report results of a study of the growth of indium phosphide and indium gallium arsenide layers on 50 mm diam indium phosphide substrates by trichloride vapor phase epitaxy under a variety of conditions and some effects of reactor parameters on the growth process from a wafer‐scale point of view. It is shown that the patterns of variation observed in two‐dimensional wafer‐scale growth rate maps can be correlated with data obtained from series of runs in which conditions were systematically varied. The results are interpreted in terms of the underlying physics and chemistry of the growth process.
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