Abstract
We have prepared metal-insulator-semiconductor ($M\ensuremath{-}I\ensuremath{-}S$) structure for major symmetry planes of Ge. The samples are examined and characterized systematically by capacitance-voltage ($C\ensuremath{-}V$) and conductivity measurements [$\ensuremath{\sigma}(V)$ and $\frac{d\ensuremath{\sigma}}{d{V}_{g}}$]. Lacquer-coated specimens of (111) surfaces prepared in this work give a new period in the magneto-oscillation spectrum and thus resolve the question of missing electrons raised in the experiments of Weber et al. We determine the energy splitting of the two lowest electron subbands on (111) Ge and predict the occupancy of the lowest level of the threefold degenerate valleys for ${N}_{s}$ above \ensuremath{\sim}1.0 \ifmmode\times\else\texttimes\fi{} ${10}^{12}$ ${\mathrm{cm}}^{\ensuremath{-}2}$.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.