Abstract
Hole transport properties of resistive hydrogenated amorphous silicon (1012 Ω cm) are studied by a pulsed photoconductivity technique. Transit time is analyzed by the Scher–Montroll plotting method. Estimation of mobility is done with photocurrent measurement under a space-charge-limited condition, and it is confirmed that the mobility value measured under this condition agrees with the calculated value found from space-charge-limited current. With no space-charge effect, temperature dependence and electric field dependence of transit time is represented by τ=τ0 E−1/α′ exp(Δ/kT).
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