Abstract
In this work, the source-gated transistor (SGT) structure is proposed for implementation of the driving transistor in active-matrix organic light-emitting diode (AMOLED) display pixel circuits. The benefits of using the SGT were evaluated through numerical device simulations based on the well-developed low temperature polycrystalline silicon (LTPS) and indium–gallium–zinc–oxide (IGZO) material models. The simulation results prove that significant reductions of the layout area and the power consumption can be achieved for both LTPS and IGZO technologies by using the SGT device structure, which in turn proves that the SGT device structure is potentially an ideal choice for achieving efficient AMOLED pixel circuits.
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