Abstract
The co-evaporated SiO x -Ge system was studied. Thin-film MIM sandwich structures were deposited by vacuum evaporation at a pressure of ≈ 10−4 Pa and were measured at a pressure of 10−3 Pa. The conductivity at low temperature and under d.c. fields has been found to be governed by a combination of an electronic hopping process and free-band conduction. At fields greater than 2 × 106 V m−1, it is concluded that the conduction process is governed by the Poole-Frenkel effect. Comparison with earlier results on SiO x -GeO2 films showed small differences in activation energy for conduction for samples of broadly similar overall composition.
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