Abstract
A sample of cold-rolled, polycrystallinc niobium was exposed to a fluence of 1.5 X 10 14 MeV neutrons/cm. Material sputtered from this sample was collected on a single crystal silicon disk placed in close juxtaposition to the Nb target. The collector was examined by three techniques, IMMA, SEM and Rutherford back-scatter of He ions. The sputtered material was found to be in two forms. The entire collector was covered with a background of “atomically” sputtered material. Superimposed on this were a number of irregular areas of high Nb concentration, patches or clusters of sputtered Nb atoms. When the total sputter yield is calculated from both of these forms a value of the order of 2–5 × 10 −5 is obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
