Abstract
The doping of ZnO nanoparticles (NPs) has been attracting a lot of attention both for fundamental studies and potential applications. In this manuscript, we report the preparation of gallium doped zinc oxide (GZO) NPs through the solvothermal method. In order to obtain the effective Ga doping in the ZnO crystalline lattice, we identified the optimal reaction conditions in terms of different Zn precursors, temperature, and heating rate. The results show that GZO NPs with tunable infrared absorption can be received using different molar ratios of Ga(NO3)3 and zinc stearate (Zn[CH3(CH2)16COO]2, ZnSt2) kept in the sealed autoclaves at 160 °C for 8 h. Furthermore, the growth of the GZO NPs was investigated by monitoring the optical absorption spectral and the corresponding chemical composition of aliquots extracted at different reaction time intervals.
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