Abstract
Solution deposition has potential for highly cost-effective fabrication of thin film transistors (TFTs) on flexible substrates. Shape memory polymer (SMP), with improved thermal mechanical response, may enable large-area flexible devices, as well as add control to the product shape and modulus. Until date, TFTs made on SMP substrates have been limited to vacuum-deposition methods. While TFTs processed through more economical solution-based techniques achieve device performance close to their vacuum-processed counterparts, they have not yet been demonstrated on SMP substrates due to the required high calcination temperatures (> 500 °C). To take full advantages of SMP, low temperature ( 2 O 3 TFTs, deposited from solution-combustion synthesis, are fabricated on Si substrates with different solution-deposited dielectrics to evaluate their potential for transferring to SMP.
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