Abstract
Ge20Sb5S75 thin films with high chemical resistance to aliphatic amines were deposited from solutions of various glass concentrations (0.015-0.09 g of grinded glass material/ml of n-butylamine) by the spin-coating technique. As-prepared and annealed thin films were analyzed by spectroscopic ellipsometry and EDS (energy-dispersive X-ray spectroscopy). Results proved that the refractive index of thin films was not affected by the solution concentration (within studied range), and the studied optical properties of deposited samples were homogenous in their volume. The Ge20Sb5S75 solution of the highest concentration (0.09 g/ml) was chosen for deposition of thicker chalcogenide glass material using multiply deposition/thermal stabilization procedure. Prepared multilayers proved to have good optical quality and homogenous chemical resistance through the whole thickness. No interfaces between layers were observed from etching kinetics and SEM scans. Thus, the results confirmed that multiple layers stacking procedure is suitable for deposition of thick homogenous Ge20Sb5S75 thin films.
Highlights
Chalcogenide glasses (ChGs) are important semiconducting materials with applications especially in IR optics, optoelectronics and photonics [1−3]
The thin films were spin-coated from prepared ChG solutions using the same deposition conditions and they were characterized by spectroscopic ellipsometry
The spectroscopic ellipsometry data proved that no studied as-prepared or annealed thin films exhibited formation of refractive index gradient within their thickness and the volume of thin film was evaluated as homogenous material
Summary
Chalcogenide glasses (ChGs) are important semiconducting materials with applications especially in IR optics, optoelectronics and photonics [1−3]. They possess high refractive index and wide IR transparency window, which make them unique in comparison with other commercially produced glasses. [2−4]) the ChGs can be deposited as amorphous thin films by vapor or solution based deposition techniques. Sometimes the fractionation of deposited material can occur (especially during thermal evaporation [8,12]) and vacuum based deposition techniques areńt suitable for preparation of thin films doped with thermally or vacuum unstable materials or for preparation of composite materials (e.g. ChG thin films doped with semiconductor luminescent nanoparticles [13,14])
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