Solution-processed dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene transistor memory based on phosphorus-doped silicon nanoparticles as a nano-floating gate

Abstract

High-performance organic field-effect transistor (OFET) memories were developed by a simple solution process using phosphorus-doped silicon nanoparticles (Si NPs) and dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) precursor–polystyrene (PS) blends. Si NPs were doped with phosphorus to control the ionization potential and functioned as a nano-floating gate. DNTT precursor–PS blends were converted to DNTT/PS layers on a Si NP layer by thermal annealing. The OFET memories clearly exhibited a memory window of 20 V and a notably large threshold voltage (Vth) shift of 40 V after the application of negative and positive voltages to the gate electrode.