Abstract
AbstractTernary chalcogenide, silver antimony sulfide (AgSbS2), has emerged with great potential for optoelectronic applications, thanks to its excellent optical properties, facile processability and superior stability. However, high‐performance AgSbS2‐based photodiodes have not been realized mainly due to the large dark current caused by the poor morphology and device leakage. Here, compact AgSbS2 and porous AgSbS2 thin films are fabricated mainly via modulating the sol–gel processes of the precursors. After optimizing the Ag content and the thermal annealing temperature of the AgSbS2 films, AgSbS2 photodiodes with excellent performance metrics, including low dark current density, decent specific detectivity, and superior stability, are achieved. Furthermore, the optimized AgSbS2‐based photodetectors are also introduced for heart rate detection, which exhibit excellent sensitivity and great potential for real applications.
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