Solution processable high quality ZrO2 dielectric films for low operation voltage and flexible organic thin film transistor applications

Abstract

Low temperature fabrication of high quality dielectric films for high performance flexible electronics is still a big challenge. In this work, we realized low temperature fabrication of high quality amorphous ZrO2 dielectric films via a low-cost solution process. The microstructure and electrical properties, as well as the electronic structures of solution processed ZrO2 films have been investigated systematically. The ZrO2 films with 160 °C annealed showed a low leakage current (3.6 × 10−5 A cm−2 at −3 V) and a high band gap (5.4 eV). The flexible organic thin film transistor (OTFT) made by using the solution-processed amorphous ZrO2 dielectric shows a low operation voltage of 4 V and a high drain current on/off ratio of 2.4 × 105. The frequency response of the ZrO2-OTFT device is up to 51.8 KHz under a low gate voltage of −3 V. Our work demonstrated that a solution processable ZrO2 film is promising for applications in future low power consumption and wearable flexible electronic devices.