Abstract

Programmable metallization cell (PMC) memory is a non-volatile memory that stores data states as programming current-dependent resistance levels via growth or dissolution of a metallic electrodeposit between the two electrodes. PMC memory is extremely scalable and has shown good performance in terms of switching speed, retention and endurance. Another interesting property of this technology is that the devices are inherently flexible. In this paper, we demonstrate that this memory shows great potential for integration with flexible thin-film technology. We show that a PMC memory element can be controlled with a TFT switching element and that PMC devices can be fabricated on a flexible substrate and can continue to operate after being subjected to a high degree of bending.

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