Sol-Gel Derived Al-Ga Co-Doped ZnO Thin Films Embedded with Microrods.

Abstract

Aluminium–gallium (Al–Ga) co-doped ZnO (AGZO) thin films with different Al–Ga at.% were spin coated on glass substrates using sol–gel spin coating technique. Morphological images by atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) reveal that the granular structures of co-doped films are embedded with microrods, which has never been reported before. The density of the microrods increases with higher co-doping at.%. The Hall Transport measurements reveal that the electrical properties of the co-doped films are comparable with single Ga doped ZnO films, which implies that the co-doping method can be a way forward to reduce the fabrication cost of the doped ZnO films involving expensive raw material. Also, the unique features of the AGZO films embedded with microrods may create new opportunity for these films to be implemented in emerging optoelectronic devices such as solar cells and organic light emitting diodes.