Abstract
Sol–gel deposition of ZnO:Cu:Al thin films were co-doped different Cu:Al ratio. The optoelectronic and structural properties of the resultant film were evaluated using scanning electron microscopy, X-ray diffraction, energy dispersive spectroscopy, photoluminescence spectroscopy and UV–VIS spectroscopy. It was found that the Al content leads to narrowing of the band gap and that excessive Al doping concentration greater than 5at% degrade the film’s properties.
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