Abstract
The main characteristics of Hall Effect Sensors, based on “silicon-on-insulator” (SOI) structure in the ideal design features, are evaluated by performing three-dimensional physical simulations. A particular Hall shape reproducing an XFAB SOI XI10 integration process is analyzed in details. In order to assess the performance of the considered Hall cell, the Hall voltage, absolute sensitivity and input resistance were extracted through simulations. Electrostatic potential distribution and Hall mobility were also produced through simulations for the considered SOI Hall Basic cell. A comparison between the performance of the same Hall cell manufactured in regular bulk and SOI CMOS technology respectively is given.
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