Abstract
This last decade Silicon-on-Insulator (SOI) MOSFET technology has demonstrated its potentialities for high frequency (reaching cut-off frequencies close to 500 GHz for nMOSFETs) and for harsh environments (high temperature, radiation) commercial applications. For RF and system-on-chip applications, SOI also presents the major advantage of providing high resistivity substrate capabilities, leading to substantially reduced substrate losses. Substrate resistivity values higher than 1 kΩ cm can easily be achieved and high resistivity silicon is commonly foreseen as a promising substrate for radio frequency integrated circuits and mixed signal applications. In this chapter, based on several experimental and simulation results, the interest, limitations but also possible future improvements of the SOI MOS technology are presented.
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