Abstract
Low-temperature formation (~150°C) of Ge films on insulator is investigated for realization of advanced flexible devices. We propose utilization of Sn as catalyst to enhance the crystallization at low-temperatures. By annealing (150–200°C) of a-Ge/Sn stacked structures formed on insulators, the composition distributions of Ge/Sn layers are inverted, and Sn/poly-Ge stacked structures are obtained. The results demonstrate that the crystallization occurs at 150°C, which is slightly below the eutectic temperatures. This Sn-induced crystallization technique is useful to obtain poly-Ge on low-cost flexible substrates (softening temperature: ~200°C).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
