Abstract
When producing aluminum nitride films used in radio electronic devices on bulk (BAW) and surface acoustic waves (SAW), such as resonators, filters, sensors, by magnetron sputtering, a problem arises due to the large surface roughness of the films, as a result of which acoustic waves scatter on irregularities and, as a result, deterioration of the resonance characteristics of the devices. In this paper, we study the possibility of improving the surface quality of aluminum nitride films by smoothing the surface roughness upon irradiation with a beam of cluster argon ions. It is shown that the effect of low-energy (10 V/atom) argon cluster ions leads to surface modification, removal of residual chemical contaminants in the near-surface layer, and additional smoothing of the film surface at an ultra-small thickness of the etched layer (<100 nm).
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