Abstract

We have developed a novel acquisition methodology for the recording of electron energy loss spectra (EELS) using a scanning transmission electron microscope (STEM): “Smart Acquisition”. Smart Acquisition allows the independent control of probe scanning procedures and the simultaneous acquisition of analytical signals such as EELS. The original motivation for this work arose from the need to control the electron dose experienced by beam-sensitive specimens whilst maintaining a sufficiently high signal-to-noise ratio in the EEL signal for the extraction of useful analytical information (such as energy loss near edge spectral features) from relatively undamaged areas. We have developed a flexible acquisition framework which separates beam position data input, beam positioning, and EELS acquisition. In this paper we demonstrate the effectiveness of this technique on beam-sensitive thin films of amorphous aluminium trifluoride. Smart Acquisition has been used to expose lines to the electron beam, followed by analysis of the structures created by line-integrating EELS acquisitions, and the results are compared to those derived from a standard EELS linescan. High angle annular dark-field images show clear reductions in damage for the Smart Acquisition areas compared to the conventional linescan, and the Smart Acquisition low loss EEL spectra are more representative of the undamaged material than those derived using a conventional linescan. Atomically resolved EELS of all four elements of CaNdTiO show the high resolution capabilities of Smart Acquisition.

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