Abstract
Small-area Zn-diffused homojunction InGaAs/InP p-i-n photodetectors for wavelengths up to 1.65 μm have been fabricated in a back-illuminated configuration. The dark current is 5 nA and the capacitance is 0.3 pF at -10 V bias; the quantum efficiency is 65% without a.r. coatings. As 1.31 μm detectors in a p-i-n/f.e.t. receiver preamplifier, the diodes have provided a receiver sensitivity of -46.7 dBm at 45 Mb/s and -36 dBm at 274 Mb/s for 10-9 error rate.
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