Abstract
A chemical mechanical polishing (CMP) process was selected to smooth TiO2 thin film surface and improve the removal rate. Meanwhile, the optimal process conditions were used in TiO2 thin film CMP. The effects of silica sols concentration, slurry pH, chelating agent and active agent concentration on surface roughness and material removal rate were investigated. Our experimental results indicated that we got lower surface roughness (1.26 Å, the scanned area was 10 × 10 μm2) and higher polishing rate (65.6 nm/min), the optimal parameters were: silica sols concentration 8.0%, pH value 9.0, active agent concentration 50 mL/L, chelating agent concentration 10 mL/L, respectively.
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