Abstract
The aluminium-germanium contact has been studied in detail, with particular emphasis on (a) the change of barrier height with time after fabrication and (b) the current changes which take place following the application of a constant bias voltage. Three kinds of germanium surface have been used: etched, cleaved in air and cleaved in ultra-high vacuum. The results can be explained in detail by a model involving slow surface states in the oxide by making two assumptions: (i) that changes take place in the oxide film on the germanium surface after metal evaporation; (ii) that the application of a voltage of either polarity causes charge exchange between the slow states and the semiconductor, which leads in turn to a change in the height of the potential barrier for electrons passing from the metal into the semiconductor.
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