Abstract
The electronic states of InAs/GaAs quantum dot has investigated for triple conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage. Tunneling-induced transparency (TIT) in triple InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The interdot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in triple InAs/GaAs quantum dots controlled by electric fields.
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