Abstract
We carry out the surface potential (SP) measurements of Si-doped InN nanorods (NRs) grown by plasma-assisted molecular beam epitaxy. Photoluminescence and photoemission spectroscopic studies reveal that the Si-doped InN nanorods possess surface electron accumulation. To estimate the SP value of the InN nanorods, a contact potential difference is measured using Kelvin probe force microscopy (KPFM). In order to avoid the influence of the surface adsorbed species, KPFM measurements were carried out at a high vacuum condition of ∼7.5 × 10−7 mbar. The SP value of the Si-doped InN nanorods is found to depend on the size of nanorods. The size-dependent SP value of the Si-doped InN nanorods is attributed to the variation in the downward surface band bending caused by the change in the sheet carrier density of surface electron accumulation. The change in surface band bending is the result of the variation in the free-electron distribution with a size of the NRs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
