Abstract
We investigate the heteroepitaxial Si0.5Ge0.5 quantum dot site-selection on a patterned Si(001) substrate by continuously varying the underlying substrate pattern morphology from pit-in-terrace to quasi-sinusoidal. The pit-in-terrace morphology leads to well-ordered quantum dots centered in the pits over a wide range of pattern wavelengths. However, for quasi-sinusoidal morphology, when the pattern wavelength is twice the intrinsic lengthscale, quantum dots suddenly bifurcate and shift to form in every saddle point, with high uniformity in size and site occupancy. We compare our results with existing models of quantum dot formation on patterned surfaces.
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