Abstract
The encapsulation method of flexible organic light emitting devices (OLEDs) was investigated for the structure of ITO / 2-TNATA / NPB / Alq3 : Rubrene (1 vol.%) / Alq3 / LiF / Al / Alq3 / LiF / Al (OLED #1), on which SiNx thin film was deposited and metal film was attached to protect the damage of OLED from oxygen and moisture. The SiNx thin film was deposited by plasma enhanced chemical vapor deposition (PECVD) method using SiH4 of 20 sccm and N2 of 15~35 sccm as reactor gases. The optimum SiNx deposition condition was found to be 20 sccm SiH4 and 20 sccm N2 from the Ca test of the fabricated SiNx thin film. The life time of OLED #1, OLED #1 / SiNx 200 nm, OLED #1 / SiNx 400 nm and OLED #1 / SiNx 400 nm / metal film was 7, 12, 25, and 45 hours, respectively. In conclusion, it has been shown that the lifetime of OLEDs can be improved more than 6 times by SiNx film and a metal film encapsulation.
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