Abstract
The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance–voltage (C–V) for MIS structures, as well as output and transfer characteristics for transistors). Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states.
Highlights
Due to the increased use of portable electronic devices, research has been devoted to developing new materials and structures for several applications in plastic technology
We have reported floating gate memory devices based on the metal-insulator-semiconductor structures (MIS) and transistor structure, using a thin film of Au layer [8,26] where there is a clear hysteresis in their electrical characteristics for the transistor and for the capacitance–voltage (C–V) characteristics of MIS structures
The C–V curve for the control device, with a reference structure of Al/poly(methyl methacrylate) (PMMA)/pentacene/Au, reveals the typical characteristics of an MIS structure based on a p-type semiconductor, with a flat–band voltage of about −8 V and full semiconductor depletion at about 1 V
Summary
Due to the increased use of portable electronic devices, research has been devoted to developing new materials and structures for several applications in plastic technology Applications such as organic solar cells [1,2,3], organic thin film transistors (OTFTs) [4,5,6], light emitting displays [7], radio frequency identification (RFID) tags [8] and sensors [9] have been evaluated in the last few years. Many research groups worldwide have thoroughly investigated carbon nanotube field-effect transistors (CNTFETs) [24] as a promising replacement for silicon-based field effect transistors In this kind of field-effect transistors, several issues have to be resolved prior to large-scale integration. Achieving a large memory window, which gives an indication of the potential for high-density charge storage, was the major feature of this work
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
