Single silicon synaptic device for stochastic binary spike-timing-dependent plasticity

Abstract

In this paper, we present a single silicon synaptic device that enables stochastic binary spike-timing-dependent plasticity. The single silicon synaptic device, which is similar to a conventional metal-oxide-semiconductor field-effect transistor structure, is implemented using standard complementary metal-oxide-semiconductor technology. The stochastic nature of the feedback mechanism induced by weak impact ionization is experimentally demonstrated. Because of probabilistic dynamics in the feedback mechanism, the single silicon synaptic device features stochastic binary spike-timing-dependent plasticity.