Abstract
We demonstrate that a single photoexcited InGaAs semiconductor quantum dot (QD) grown by organo-metallic chemical vapor deposition on prepatterned substrates emits one photon at a time, with no uncontrolled background photon emission, making it an excellent single photon emitter. Moreover, our fabrication technique offers complete site control and small inhomogeneous broadening of QD arrays, which is essential for the practical implementation of QDs in efficient solid-state single photon emitting devices.
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