Abstract
Silicon photodiode-based CMOS sensors with backside-illumination for 300-1100 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths, the enhancement allows 70% absorption in a 3 μm thick Si. It is 4× better than that for the flat pixel. We compared different shapes and sizes of single hole and hole arrays. We have shown that a certain size and shape in single hole-based pixels contribute to stronger enhancement of optical efficiencies. The crosstalk was successfully reduced by employing trenches between pixels. We optimized the dimensions of the trenches to achieve minimal pixel separation for 1.12 μm pixels.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
