Abstract
A method is proposed to produce large-area single-layer graphene oxide films on the surface of semiconductor silicon wafers by precipitation from aqueous suspensions. Graphene oxide is synthesized from natural crystalline graphite during chemical oxidation and represents a wide-gap insulator. Single-layer graphene with a homogeneous-fragment size up to 50 μm can be formed by the reduction of graphene oxide films, and this size is significantly larger than those achieved to date.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
