Abstract
The average effect of a single 500eV incident argon ion on a silicon surface is studied using molecular dynamics simulations. More than 103 ion impacts at random surface points are averaged for each of seven incidence angles, from 0° to 28° off normal, to determine a local surface height change function, or a crater function. The crater shapes are mostly determined by mass rearrangement; sputtering has a relatively small effect. Analytical fitting functions are provided for several cases, and may serve as input into kinetic Monte Carlo calculations or stability analyses for surfaces subjected to ion bombardment.
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