Single event upset test results on a prescaler fabricated in IBM's 5HP silicon germanium heterojunction bipolar transistors BiCMOS technology

R.A Reed,H.S Kim,H Ainspan,J.D Cressler,K.A Label,P.W Marshall,Guofu Niu Guofu Niu,C.J Marshall

doi:10.1109/redw.2001.960469

Single event upset test results on a prescaler fabricated in IBM's 5HP silicon germanium heterojunction bipolar transistors BiCMOS technology

R.A Reed, H.S Kim + Show 6 more

https://doi.org/10.1109/redw.2001.960469

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Publication Date: Jul 16, 2001

Citations: 9

Affiliation: Goddard Space Flight Center

#Single Event Upset #Silicon Germanium Heterojunction Bipolar Transistors + Show 8 more

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Abstract

This paper presents heavy ion and proton single event upset (SEU) test results on a IBM designed high-speed prescaler fabricated in the SiGe HBT BiCMOS process. These are the first published SEU results on this technology.

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