Abstract
Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs (heterojunction bipolar transistors) following 3.0-MeV alpha -particle and 620-nm picosecond laser excitation reveal charge-collection efficiencies up to 28 times smaller than for GaAs MESFETs, with approximately 90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. It is shown that picosecond laser excitation reproduces the ion-induced transients nicely providing a valuable tool for the investigation of charge-collection and SEU (single event upset) phenomena in these devices. >
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