Abstract
We investigate a single-electron tunneling effect of two-dimensional electron systems formed in the Corbino nano-scale disk. By controlling bias and gate voltages, the transistor using this effect is able to control electrons one by one. The present study focuses on the electronic transmission probability affected by the charging energy in the Corbino-type single-electron transistor. We reformulated the Schrödinger equation for an electron in the Corbino disk in order to consider the effect of the curvature of the disk, taking into account the charging effect on the performance of the Corbino-type single-electron transistor. We formulated the transmission probability of the electron by applying the Wentzel-Kramers-Brillouin (WKB) method. The electron’s energy in the formula of the transmission probability is then associated to the energy eigenvalue of the Schrödinger equation for an electron in an effective confining potential. We numerically solved the Schrödinger equation to evaluate the transmission probability. Our results show that the transmission probability strongly depends on the charging energy stored in the Corbino disk depending on its size.
Highlights
Remarkable progress in the fabrication of nanostructure1–5 has been enhancing the studies on electronic states of a Corbino-type quantum disk
Our results show that the transmission probability strongly depends on the charging energy stored in the Corbino disk depending on its size
We shortly review the formulation of the Schrödinger equation for the Corbino disk
Summary
Remarkable progress in the fabrication of nanostructure has been enhancing the studies on electronic states of a Corbino-type quantum disk. The transistor has been attracted from an applied viewpoint since it is possible for future electronic devices with low energy consumption.. The transistor has been attracted from an applied viewpoint since it is possible for future electronic devices with low energy consumption.6,7 This low energy consumption comes from the fact that only a few electrons can be transmitted when the energy level of an incident electron is equal to that of the discretized energy levels of electrons confined in the disk. −i d/dr in the deformed Hilbert space These studies show that we can formulate a Schrödinger equation of an electron confined in the Corbino disk. We found that the charging energy strongly affects the profile of the transmission probability This result means that the charging energy is important quantity to apply the Corbino disk for the single-electron transistor.
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