Abstract
In this paper theoretical concepts based on analytical models for Single Electron Transistor (SET) are presented. It has been observed that the fabrication technology has reached on its limits for the MOS feature size, beyond which further scaling of the channel is not achievable. Due to which SET is considered as the future of the complex IC fabrication by replacing MOS technology, having small quantum dot or island, instead of channel. Working of the SET is based on the Coulomb blockade principle which is the heart of the technology. Quantum mechanics is the physics used for explaining the tunnelling of single electron of SET, which says that the energy levels are quantized not continuous. Main reason behind the advancement in SET is the market requirement of the low power, high density and fast switching devices. These are possible by SET; no doubt speed is an issue for the memories designed with SET, with its low gain and high input impedance. In the review, mathematical model including tunnelling effect in junction, coulomb blockade, current equation, free energy equation based on Shcrodinger's wave equation are presented.
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