Abstract
Single-electron devices using a self-ordering metal nanodroplet array as multitunneling junctions (MTJ) were fabricated. The nanodroplet array was fabricated by sequential deposition of Al and Ga on a epitaxial CaF2 film grown on Si substrate, so that the Ga/Al droplets were aligned along the CaF2 step edges. Current-voltage characteristics of an MTJ diode and an MTJ transistor showed a Coulomb staircase at 55 K and 287 K, respectively. A large Coulomb gap observed on a source–drain current indicates that electrons tunnel a large number of nanodroplet arrays.
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