Abstract

In this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl2·6H2O as a single-source precursor. Various morphologies of δ-Ni2Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the δ-Ni2Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/μm), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation.

Highlights

  • With the miniaturization of electronic devices, onedimensional (1-D) nanostructures have attracted much attention due to their distinct physical properties compared with thin film and bulk materials

  • As the ambient pressure was raised to the range of 9 to 12 Torr (Figure 1b,c), NWs with high aspect ratios were obtained for proper concentrations of precursors and growth conditions

  • When the pressure was higher than 15 Torr, the concentration of the Ni source was oversaturated and the morphology of the product turned into islands instead of NWs

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Summary

Introduction

With the miniaturization of electronic devices, onedimensional (1-D) nanostructures have attracted much attention due to their distinct physical properties compared with thin film and bulk materials. One-dimensional materials, such as nanorods, nanotubes, nanowires (NWs), and nanobelts, are promising to be utilized in spintronics, thermoelectric and electronic devices, etc. Metal silicides have been widely synthesized and utilized in the contemporary metal-oxide-semiconductor field-effect transistor as source/drain contact materials, interconnection [6], and Schottky barrier contacts. One-dimensional metal silicides have shown excellent field emission [7,8] and magnetic properties [9,10,11]. Ni silicide NWs with low resistivity, low contact resistance, and excellent field emission properties [19,20] are considered as a promising material in the critical utilization for the future nanotechnology. Wu et al have formed NiSi NWs by the chemical reaction between coated

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