Abstract
AbstractSingle crystal growth and characterization of the binary semiconducting compound FeGa3 and its Ge‐substitute FeGa3–xGex are reported. Whereas there have been several investigations on the thermoelectric properties based on small samples grown by the flux method, this study is the first approach using the Czochralski growth technique from well‐oriented single‐crystalline seeds. Problems and solutions of the growth of cm3‐size single crystals are discussed in detail. Ge segregation in FeGa3–xGex is described by a segregation coefficient lower than unity which leads to an axially increasing Ge content along the pulling direction. Consequences with respect to lattice parameter changes and thermoanalytic measurements are reported.
Highlights
Single crystal growth and characterization of the binary semiconducting compound FeGa3 and its Ge-substitute FeGa3–xGex are reported
Introduction systems have already been studied in 4f- and 3d-systems, ferromagnetic quantum criticality is of significant interest for basic
The self-constructed Czochralski apparatus is not equipped with an automatic diameter control, and to the best of authors’ knowledge, no crystal weighing system would be able to resolve the mass increase of the crystal resulting from growth rates as low as 25–50 μm h−1
Summary
Single crystal growth and characterization of the binary semiconducting compound FeGa3 and its Ge-substitute FeGa3–xGex are reported. 1. Introduction systems have already been studied in 4f- and 3d-systems, ferromagnetic quantum criticality is of significant interest for basic. Introduction systems have already been studied in 4f- and 3d-systems, ferromagnetic quantum criticality is of significant interest for basic According to these various origins of interest in FeGa3 and reand was first described in detail by Häussermann et al.[1] It has lated intermetallics, there have been several attempts to grow sinbeen found that Fe and Ga strongly interact opening a d–p hy- gle crystals. Looking into the neighborhood of all these crystal growth studies used exclusively a single method
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